Отправить статью по E-mail Formation of graphite/sic structures by the thermal decomposition of silicon carbide
- Авторы: Mynbaeva M.1,2, Lavrent’ev A.1, Mynbaev K.1,2
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Учреждения:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- Выпуск: Том 50, № 1 (2016)
- Страницы: 138-142
- Раздел: Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/196721
- DOI: https://doi.org/10.1134/S1063782616010176
- ID: 196721
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Аннотация
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
Об авторах
M. Mynbaeva
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Автор, ответственный за переписку.
Email: mgm@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: mgm@mail.ioffe.ru
Россия, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: mgm@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
