Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films
- Авторы: Zaynabidinov S.1, Saidov A.2, Leiderman A.2, Kalanov M.3, Usmonov S.2, Rustamova V.3, Boboev A.1,3
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Учреждения:
- Babur Andizhan State University
- Starodubtsev Physical–Technical Institute
- Institute of Nuclear Physics
- Выпуск: Том 50, № 1 (2016)
- Страницы: 59-65
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/196684
- DOI: https://doi.org/10.1134/S1063782616010231
- ID: 196684
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Аннотация
The possibility of growing the (GaAs)1–x–y(Ge2)x(ZnSe)y alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is af = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence I = I0exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ~ Vα, where the exponent α varies with increasing voltage at high voltages (V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
Об авторах
S. Zaynabidinov
Babur Andizhan State University
Автор, ответственный за переписку.
Email: prof_sirojiddin@mail.ru
Узбекистан, Andizhan, 170100
A. Saidov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Узбекистан, Tashkent, 100084
A. Leiderman
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Узбекистан, Tashkent, 100084
M. Kalanov
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Узбекистан, Tashkent, 100214
Sh. Usmonov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Узбекистан, Tashkent, 100084
V. Rustamova
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Узбекистан, Tashkent, 100214
A. Boboev
Babur Andizhan State University; Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Узбекистан, Andizhan, 170100; Tashkent, 100214