Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films
- Авторлар: Zaynabidinov S.1, Saidov A.2, Leiderman A.2, Kalanov M.3, Usmonov S.2, Rustamova V.3, Boboev A.1,3
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Мекемелер:
- Babur Andizhan State University
- Starodubtsev Physical–Technical Institute
- Institute of Nuclear Physics
- Шығарылым: Том 50, № 1 (2016)
- Беттер: 59-65
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/196684
- DOI: https://doi.org/10.1134/S1063782616010231
- ID: 196684
Дәйексөз келтіру
Аннотация
The possibility of growing the (GaAs)1–x–y(Ge2)x(ZnSe)y alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is af = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence I = I0exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ~ Vα, where the exponent α varies with increasing voltage at high voltages (V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
Авторлар туралы
S. Zaynabidinov
Babur Andizhan State University
Хат алмасуға жауапты Автор.
Email: prof_sirojiddin@mail.ru
Өзбекстан, Andizhan, 170100
A. Saidov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Өзбекстан, Tashkent, 100084
A. Leiderman
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Өзбекстан, Tashkent, 100084
M. Kalanov
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Өзбекстан, Tashkent, 100214
Sh. Usmonov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Өзбекстан, Tashkent, 100084
V. Rustamova
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Өзбекстан, Tashkent, 100214
A. Boboev
Babur Andizhan State University; Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Өзбекстан, Andizhan, 170100; Tashkent, 100214