Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films
- Authors: Zaynabidinov S.Z.1, Saidov A.S.2, Leiderman A.Y.2, Kalanov M.U.3, Usmonov S.N.2, Rustamova V.M.3, Boboev A.Y.1,3
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Affiliations:
- Babur Andizhan State University
- Starodubtsev Physical–Technical Institute
- Institute of Nuclear Physics
- Issue: Vol 50, No 1 (2016)
- Pages: 59-65
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/196684
- DOI: https://doi.org/10.1134/S1063782616010231
- ID: 196684
Cite item
Abstract
The possibility of growing the (GaAs)1–x–y(Ge2)x(ZnSe)y alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is af = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence I = I0exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ~ Vα, where the exponent α varies with increasing voltage at high voltages (V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
About the authors
S. Z. Zaynabidinov
Babur Andizhan State University
Author for correspondence.
Email: prof_sirojiddin@mail.ru
Uzbekistan, Andizhan, 170100
A. S. Saidov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Uzbekistan, Tashkent, 100084
A. Yu. Leiderman
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Uzbekistan, Tashkent, 100084
M. U. Kalanov
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Uzbekistan, Tashkent, 100214
Sh. N. Usmonov
Starodubtsev Physical–Technical Institute
Email: prof_sirojiddin@mail.ru
Uzbekistan, Tashkent, 100084
V. M. Rustamova
Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Uzbekistan, Tashkent, 100214
A. Y. Boboev
Babur Andizhan State University; Institute of Nuclear Physics
Email: prof_sirojiddin@mail.ru
Uzbekistan, Andizhan, 170100; Tashkent, 100214