| Edição |
Seção |
Título |
Arquivo |
| Volume 51, Nº 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
|
| Volume 52, Nº 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
|
| Volume 52, Nº 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Red Single-Photon Emission from InAs/AlGaAs Quantum Dots |
|
| Volume 52, Nº 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
|
| Volume 52, Nº 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
|
| Volume 52, Nº 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
| Volume 53, Nº 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
|
| Volume 53, Nº 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
|
