Informaçao sobre o Autor
Kudoyarov, M.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 7 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films | |
Volume 52, Nº 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System | |
Volume 52, Nº 10 (2018) | Physics of Semiconductor Devices | Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes | |
Volume 53, Nº 6 (2019) | Physics of Semiconductor Devices | Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |