Informaçao sobre o Autor
Bakhvalov, K. V.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 5 (2016) | Physics of Semiconductor Devices | Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers | |
Volume 50, Nº 9 (2016) | Physics of Semiconductor Devices | On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions | |
Volume 50, Nº 10 (2016) | Physics of Semiconductor Devices | Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |