Автор туралы ақпарат
Bakhvalov, K. V.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 5 (2016) | Physics of Semiconductor Devices | Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers | |
Том 50, № 9 (2016) | Physics of Semiconductor Devices | On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions | |
Том 50, № 10 (2016) | Physics of Semiconductor Devices | Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |