Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots
- Авторлар: Derebezov I.1,2, Gaisler V.1,3, Gaisler A.1, Dmitriev D.1, Toropov A.1, von Helversen M.4, de la Haye C.4, Bounouar S.4, Reitzenstein S.4
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Telecommunications and Information Science
- Novosibirsk State University
- Institut für Festkörperphysik, Technische Universität Berlin
- Шығарылым: Том 53, № 10 (2019)
- Беттер: 1304-1307
- Бөлім: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207140
- DOI: https://doi.org/10.1134/S1063782619100063
- ID: 207140
Дәйексөз келтіру
Аннотация
The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.
Негізгі сөздер
Авторлар туралы
I. Derebezov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Telecommunications and Information Science
Хат алмасуға жауапты Автор.
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630102
V. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
A. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Dmitriev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. von Helversen
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Германия, Berlin, 10623
C. de la Haye
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Германия, Berlin, 10623
S. Bounouar
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Германия, Berlin, 10623
S. Reitzenstein
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Германия, Berlin, 10623