Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires
- Autores: Nikolaeva A.1,2, Konopko L.1,2, Gherghishan I.1, Rogacki K.2, Stachowiak P.2, Jezowski A.2, Shepelevich V.3, Prokoshin V.3, Gusakova S.3
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Afiliações:
- Ghitu Institute of Electronic Engineering and Nanotechnologies
- Institute of Low Temperature and Structure Research, Academy of Sciences
- Belarusian State University
- Edição: Volume 53, Nº 5 (2019)
- Páginas: 657-661
- Seção: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206112
- DOI: https://doi.org/10.1134/S1063782619050191
- ID: 206112
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Resumo
The results of experimental investigations into the thermoelectric properties (electrical conductivity, thermoelectric power, and thermal conductivity) of microtextured foils and single-crystal wires based on semimetal and semiconductor Bi1 –xSbx alloys are presented in the temperature range of 4.2–300 K. It is found that the band gap ΔE in Bi–17 at % Sb wires increases with decreasing wire diameter d, which is a manifestation of the quantum-size effect. At low temperatures (T < 50 K), in the wires with d < 400 nm, the electrical conductivity increases due to the significant contribution of highly conductive surface states characteristic of topological insulators. It is found for the first time that the thermal conductivity of semimetal Bi–3 at % Sb foils at low temperatures is two orders of magnitude lower, and that of semiconductor Bi–16 at % Sb foils one order of magnitude lower, than that in bulk samples of the corresponding composition due to significant phonon scattering at grain boundaries and surfaces. This effect leads to considerable enhancement of the thermoelectric figure-of-merit ZT and can be used in miniature low-temperature thermoelectric energy converters.
Sobre autores
A. Nikolaeva
Ghitu Institute of Electronic Engineering and Nanotechnologies; Institute of Low Temperature and Structure Research, Academy of Sciences
Autor responsável pela correspondência
Email: A.Nikolaeva@nano.asm.md
Moldova, Chisinau, MD-2028; Wroclaw, 53-217
L. Konopko
Ghitu Institute of Electronic Engineering and Nanotechnologies; Institute of Low Temperature and Structure Research, Academy of Sciences
Email: A.Nikolaeva@nano.asm.md
Moldova, Chisinau, MD-2028; Wroclaw, 53-217
I. Gherghishan
Ghitu Institute of Electronic Engineering and Nanotechnologies
Email: A.Nikolaeva@nano.asm.md
Moldova, Chisinau, MD-2028
K. Rogacki
Institute of Low Temperature and Structure Research, Academy of Sciences
Email: A.Nikolaeva@nano.asm.md
Polônia, Wroclaw, 53-217
P. Stachowiak
Institute of Low Temperature and Structure Research, Academy of Sciences
Email: A.Nikolaeva@nano.asm.md
Polônia, Wroclaw, 53-217
A. Jezowski
Institute of Low Temperature and Structure Research, Academy of Sciences
Email: A.Nikolaeva@nano.asm.md
Polônia, Wroclaw, 53-217
V. Shepelevich
Belarusian State University
Email: A.Nikolaeva@nano.asm.md
Belarus, Minsk, 220030
V. Prokoshin
Belarusian State University
Email: A.Nikolaeva@nano.asm.md
Belarus, Minsk, 220030
S. Gusakova
Belarusian State University
Email: A.Nikolaeva@nano.asm.md
Belarus, Minsk, 220030