Enviar artigo por via de e-mail Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light
- Autores: Basalaeva L.1, Nastaushev Y.1, Dultsev F.1,2, Kryzhanovskaya N.3, Moiseev E.3
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Edição: Volume 53, Nº 2 (2019)
- Páginas: 205-209
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205709
- DOI: https://doi.org/10.1134/S1063782619020027
- ID: 205709
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Resumo
Abstract—The results of investigating the spectral characteristics of reflection from silicon nanopillar (Si NP) microarrays in the wavelength region from 400 to 1100 nm are presented. The Si nanopillars are formed by electron lithography on a negative resist with subsequent reactive ion etching. The Si nanopillars are etched through a resist mask and SiO2 100 nm thick. In the spectra of reflection from nanopillar microarrays, minima are observed, the position of which depends strongly on the Si nanopillar diameter.
Sobre autores
L. Basalaeva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: basalaeva@isp.nsc.ru
Rússia, Novosibirsk, 630090
Yu. Nastaushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: basalaeva@isp.nsc.ru
Rússia, Novosibirsk, 630090
F. Dultsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: basalaeva@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
N. Kryzhanovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: basalaeva@isp.nsc.ru
Rússia, St. Petersburg, 194021
E. Moiseev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: basalaeva@isp.nsc.ru
Rússia, St. Petersburg, 194021
