Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam
- Autores: Mikoushkin V.1, Bryzgalov V.1, Makarevskaya E.1, Solonitsyna A.1, Marchenko D.2
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Afiliações:
- Ioffe Institute
- Helmholtz-Zentrum BESSY II, German-Russian Laboratory
- Edição: Volume 52, Nº 16 (2018)
- Páginas: 2057-2060
- Seção: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
- URL: https://journals.rcsi.science/1063-7826/article/view/205314
- DOI: https://doi.org/10.1134/S1063782618160194
- ID: 205314
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Resumo
The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth. The presence of only two phases was observed: of the gallium oxide Ga2O3 and elementary arsenic Aso generated due to complete decay of arsenic oxides under the ion irradiation. Depth composition profiles were determined nondestructively. Despite inhomogeneous depth distribution, these profiles demonstrated domination (90 at %) of the dielectric Ga2O3 phase virtually throughout all the oxide thickness (~2 nm).
Sobre autores
V. Mikoushkin
Ioffe Institute
Autor responsável pela correspondência
Email: M.Miikoushkin@mail.ioffe.ru
Rússia, Saint-Petersburg, 194021
V. Bryzgalov
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Rússia, Saint-Petersburg, 194021
E. Makarevskaya
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Rússia, Saint-Petersburg, 194021
A. Solonitsyna
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Rússia, Saint-Petersburg, 194021
D.E. Marchenko
Helmholtz-Zentrum BESSY II, German-Russian Laboratory
Email: M.Miikoushkin@mail.ioffe.ru
Alemanha, Berlin, D-12489