Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests
- Autores: Sergeev V.1,2, Frolov I.1, Shirokov A.1, Radaev O.1,2
-
Afiliações:
- Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of Sciences
- Ulyanovsk State Technical University
- Edição: Volume 52, Nº 15 (2018)
- Páginas: 1976-1981
- Seção: Elements of Integral Electronics
- URL: https://journals.rcsi.science/1063-7826/article/view/205240
- DOI: https://doi.org/10.1134/S1063782618150125
- ID: 205240
Citar
Resumo
The causes and mechanisms of variation in the quantum efficiency and other characteristics of InGaN/GaN heterostructures are actively investigated in various operating modes. The results are presented from an experimental study of the variation in the external quantum efficiency of low-power InGaN/GaN green light-emitting diodes with and without a quantum well in the space–charge region (SCR) of the heterostructure in the accelerated test mode. It is found that after 8 hours of testing at a temperature of 300 K in the pulse mode with a pulse amplitude of 0.5 A, a pulse duration of 100 µs, and a duty cycle of 100, the external quantum efficiency grows for all LEDs without a quantum well in the SCR and diminishes for LEDs with a quantum well throughout the range of operating currents. It is shown that at a low level of injection, the intensity of emission of light emitting diodes without a quantum well in the SCR is determined by recombination processes according to the Shockley–Read–Hall mechanism, while that of LEDs with a quantum well is determined by tunneling–recombination processes. Current training of green LEDs based on InGaN/GaN heterostructures in the forced pulse mode for 4 hours can be used as a technological operation for stabilizing their lighting characteristics, and for identifying potentially unreliable products under conditions of mass production.
Sobre autores
V. Sergeev
Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of Sciences; Ulyanovsk State Technical University
Autor responsável pela correspondência
Email: sva@ulstu.ru
Rússia, Ulyanovsk, 432071; Ulyanovsk, 432017
I. Frolov
Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of Sciences
Email: sva@ulstu.ru
Rússia, Ulyanovsk, 432071
A. Shirokov
Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of Sciences
Email: sva@ulstu.ru
Rússia, Ulyanovsk, 432071
O. Radaev
Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of Sciences; Ulyanovsk State Technical University
Email: sva@ulstu.ru
Rússia, Ulyanovsk, 432071; Ulyanovsk, 432017