Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
- Autores: Gorshkov A.1, Volkova N.2, Pavlov D.1, Usov Y.1, Istomin L.2, Levichev S.2
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Afiliações:
- Nizhny Novgorod State University
- Research Institute for Chemistry, Nizhny Novgorod State University
- Edição: Volume 52, Nº 12 (2018)
- Páginas: 1525-1528
- Seção: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204653
- DOI: https://doi.org/10.1134/S1063782618120096
- ID: 204653
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Resumo
On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.
Sobre autores
A. Gorshkov
Nizhny Novgorod State University
Autor responsável pela correspondência
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950
N. Volkova
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950
D. Pavlov
Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950
Yu. Usov
Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950
L. Istomin
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950
S. Levichev
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Rússia, Nizhny Novgorod, 603950