Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
- Авторлар: Gorshkov A.1, Volkova N.2, Pavlov D.1, Usov Y.1, Istomin L.2, Levichev S.2
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Мекемелер:
- Nizhny Novgorod State University
- Research Institute for Chemistry, Nizhny Novgorod State University
- Шығарылым: Том 52, № 12 (2018)
- Беттер: 1525-1528
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204653
- DOI: https://doi.org/10.1134/S1063782618120096
- ID: 204653
Дәйексөз келтіру
Аннотация
On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.
Авторлар туралы
A. Gorshkov
Nizhny Novgorod State University
Хат алмасуға жауапты Автор.
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950
N. Volkova
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950
D. Pavlov
Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950
Yu. Usov
Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950
L. Istomin
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950
S. Levichev
Research Institute for Chemistry, Nizhny Novgorod State University
Email: gorshkovap@mail.ru
Ресей, Nizhny Novgorod, 603950