Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions
- Autores: Okulich E.1, Okulich V.2, Tetelbaum D.1
-
Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Nizhny Novgorod Institute of Management—Branch of the Russian Presidential Academy of National Economy and Public Administration
- Edição: Volume 52, Nº 9 (2018)
- Páginas: 1091-1096
- Seção: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/203950
- DOI: https://doi.org/10.1134/S1063782618090105
- ID: 203950
Citar
Resumo
Numerical calculations of the accumulation kinetics of point defects—vacancies and divacancies—under the irradiation of Si with ions having masses of M1 ≤ 31 amu and energies of E ≤ 100 keV under various irradiation conditions are performed. The previously proposed diffusion-coagulation model is used without application of the “weak diffusion” approximation, which was performed during its analytical implementation. The main peculiarities of the dependences of the concentrations of vacancies and divacancies on the dose, ion-current density, and temperature under irradiation are analyzed. A physical interpretation of these results is given. The developed computing complex is rather flexible and makes it possible to analyze the influence of model input parameters by means of their variation and include additional processes into consideration if necessary.
Sobre autores
E. Okulich
Lobachevsky State University of Nizhny Novgorod
Email: victorokulich@mail.ru
Rússia, Nizhny Novgorod, 603950
V. Okulich
Nizhny Novgorod Institute of Management—Branch of the Russian Presidential Academy of National Economyand Public Administration
Autor responsável pela correspondência
Email: victorokulich@mail.ru
Rússia, Nizhny Novgorod, 603950
D. Tetelbaum
Lobachevsky State University of Nizhny Novgorod
Email: victorokulich@mail.ru
Rússia, Nizhny Novgorod, 603950