Enviar artigo por via de e-mail On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
- Autores: Vasileva G.1, Vasilyev Y.1, Novikov S.2, Danilov S.3, Ganichev S.3
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Afiliações:
- Ioffe Institute
- Micro and Nanoscience Laboratory
- Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
- Edição: Volume 52, Nº 8 (2018)
- Páginas: 1077-1081
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203928
- DOI: https://doi.org/10.1134/S1063782618080225
- ID: 203928
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Resumo
A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
Sobre autores
G. Vasileva
Ioffe Institute
Email: yu.vasilyev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Vasilyev
Ioffe Institute
Autor responsável pela correspondência
Email: yu.vasilyev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Novikov
Micro and Nanoscience Laboratory
Email: yu.vasilyev@mail.ioffe.ru
Finlândia, Espoo, 02150
S. Danilov
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
Alemanha, Regensburg, D-380106
S. Ganichev
Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg)
Email: yu.vasilyev@mail.ioffe.ru
Alemanha, Regensburg, D-380106
