High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

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Resumo

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.

Sobre autores

N. Bagraev

Ioffe Institute; Peter the Great St. Petersburg Polytechnic University

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251

L. Klyachkin

Ioffe Institute

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 194021

V. Khromov

Ioffe Institute

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Malyarenko

Ioffe Institute

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 194021

V. Mashkov

Peter the Great St. Petersburg Polytechnic University

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 195251

T. Matveev

Peter the Great St. Petersburg Polytechnic University

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 195251

V. Romanov

Peter the Great St. Petersburg Polytechnic University

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 195251

N. Rul’

Ioffe Institute; Peter the Great St. Petersburg Polytechnic University

Autor responsável pela correspondência
Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251

K. Taranets

Peter the Great St. Petersburg Polytechnic University

Email: impurity.dipole@mail.ioffe.ru
Rússia, St. Petersburg, 195251

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