Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures
- Autores: Plankina S.1, Vikhrova O.2, Zvonkov B.2, Nezhdanov A.1, Pashen’kin I.1
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Physico-Technical Research Institute
- Edição: Volume 51, Nº 11 (2017)
- Páginas: 1456-1459
- Seção: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201604
- DOI: https://doi.org/10.1134/S1063782617110239
- ID: 201604
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Resumo
The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the InxGa1–xP alloy. The two methods yield close results.
Sobre autores
S. Plankina
Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: plankina@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
O. Vikhrova
Physico-Technical Research Institute
Email: plankina@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
B. Zvonkov
Physico-Technical Research Institute
Email: plankina@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Nezhdanov
Lobachevsky State University of Nizhny Novgorod
Email: plankina@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
I. Pashen’kin
Lobachevsky State University of Nizhny Novgorod
Email: plankina@phys.unn.ru
Rússia, Nizhny Novgorod, 603950