Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region
- Autores: Krivyakin G.1, Volodin V.1,2, Shklyaev A.1,2, Mortet V.3, More-Chevalier J.3, Ashcheulov P.3, Remes Z.3, Stuchliková T.3, Stuchlik J.3
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Physics ASCR, v. v. i.
- Edição: Volume 51, Nº 10 (2017)
- Páginas: 1370-1376
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/201426
- DOI: https://doi.org/10.1134/S1063782617100128
- ID: 201426
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Resumo
Four pairs of p–i–n structures based on polymorphous Si:H (pm-Si:H) are fabricated by the method of plasma-enhanced chemical vapor deposition. The structures in each pair are grown on the same substrate so that one of them does not contain Ge in the i-type layer while the other structure contains Ge deposited by molecular-beam epitaxy as a layer with a thickness of 10 nm. The pair differ from one another in terms of the substrate temperature during Ge deposition; these temperatures are 300, 350, 400, and 450°C. The data of electron microscopy show that the structures formed at 300°C contain Ge nanocrystals (nc-Ge) nucleated at nanocrystalline inclusions at the pm-Si:H surface. The nc-Ge concentration increases as the temperature is raised. The study of the current–voltage characteristics show that the presence of Ge in the i-type layer decreases the density of the short-circuit current in p–i–n structures when they are used as solar cells, whereas these layers give rise to an increase in current at a reverse bias under illumination. The obtained results are consistent with known data for structures with Ge clusters in Si; according to these data, Ge clusters increase the coefficient of light absorption but they also increase the rate of charge-carrier recombination.
Sobre autores
G. Krivyakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: grisha992@gmail.com
Rússia, Novosibirsk, 630090
V. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: grisha992@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Shklyaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: grisha992@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Mortet
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200
J. More-Chevalier
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200
P. Ashcheulov
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200
Z. Remes
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200
T. Stuchliková
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200
J. Stuchlik
Institute of Physics ASCR, v. v. i.
Email: grisha992@gmail.com
Tchéquia, Cukrovarnická 10/112, Praha 6, 16200