Crystal defects in solar cells produced by the method of thermomigration


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Resumo

The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume of the silicon substrate, are reported (similar regions doped with an acceptor impurity are used to obtain high-voltage solar cells). X-ray methods (including measurements of both diffraction-reflection curves and topograms) and also high-resolution electron microscopy indicate that single-crystal regions in the form of a series of thin strips or rectangular grids are formed as a result of the thermomigration of liquid zones. Dislocation half-loops are detected in the surface layers of the front and back surfaces of the substrate. {311}-type defects are observed in the recrystallized regions.

Sobre autores

V. Lozovskii

Platov South-Russian State Polytechnic University (NPI)

Email: seredinboris@gmail.com
Rússia, Novocherkassk, 346428

A. Lomov

Institute of Physics and Technology

Email: seredinboris@gmail.com
Rússia, Moscow, 117218

L. Lunin

Platov South-Russian State Polytechnic University (NPI)

Email: seredinboris@gmail.com
Rússia, Novocherkassk, 346428

B. Seredin

Platov South-Russian State Polytechnic University (NPI)

Autor responsável pela correspondência
Email: seredinboris@gmail.com
Rússia, Novocherkassk, 346428

Yu. Chesnokov

National Research Center “Kurchatov Institute”

Email: seredinboris@gmail.com
Rússia, Moscow, 123182


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017

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