Crystal defects in solar cells produced by the method of thermomigration
- Авторлар: Lozovskii V.1, Lomov A.2, Lunin L.1, Seredin B.1, Chesnokov Y.3
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Мекемелер:
- Platov South-Russian State Polytechnic University (NPI)
- Institute of Physics and Technology
- National Research Center “Kurchatov Institute”
- Шығарылым: Том 51, № 3 (2017)
- Беттер: 285-289
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/199535
- DOI: https://doi.org/10.1134/S1063782617030162
- ID: 199535
Дәйексөз келтіру
Аннотация
The results of studying the crystal structure of regions in silicon, recrystallized during the course of thermomigration of the liquid Si–Al zone in the volume of the silicon substrate, are reported (similar regions doped with an acceptor impurity are used to obtain high-voltage solar cells). X-ray methods (including measurements of both diffraction-reflection curves and topograms) and also high-resolution electron microscopy indicate that single-crystal regions in the form of a series of thin strips or rectangular grids are formed as a result of the thermomigration of liquid zones. Dislocation half-loops are detected in the surface layers of the front and back surfaces of the substrate. {311}-type defects are observed in the recrystallized regions.
Авторлар туралы
V. Lozovskii
Platov South-Russian State Polytechnic University (NPI)
Email: seredinboris@gmail.com
Ресей, Novocherkassk, 346428
A. Lomov
Institute of Physics and Technology
Email: seredinboris@gmail.com
Ресей, Moscow, 117218
L. Lunin
Platov South-Russian State Polytechnic University (NPI)
Email: seredinboris@gmail.com
Ресей, Novocherkassk, 346428
B. Seredin
Platov South-Russian State Polytechnic University (NPI)
Хат алмасуға жауапты Автор.
Email: seredinboris@gmail.com
Ресей, Novocherkassk, 346428
Yu. Chesnokov
National Research Center “Kurchatov Institute”
Email: seredinboris@gmail.com
Ресей, Moscow, 123182