Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells


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Resumo

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

Sobre autores

S. Krishtopenko

Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Montpellier, 34095

A. Ikonnikov

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Autor responsável pela correspondência
Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

K. Maremyanin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

L. Bovkun

Institute for Physics of Microstructures

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950

K. Spirin

Institute for Physics of Microstructures

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950

A. Kadykov

Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Montpellier, 34095

M. Marcinkiewicz

Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
França, Montpellier, 34095

S. Ruffenach

Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
França, Montpellier, 34095

C. Consejo

Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
França, Montpellier, 34095

F. Teppe

Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
França, Montpellier, 34095

W. Knap

Laboratoire Charles Coulomb (L2C), UMR CNRS 5221

Email: antikon@ipmras.ru
França, Montpellier, 34095

B. Semyagin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antikon@ipmras.ru
Rússia, Novosibirsk, 630090

M. Putyato

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antikon@ipmras.ru
Rússia, Novosibirsk, 630090

E. Emelyanov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antikon@ipmras.ru
Rússia, Novosibirsk, 630090

V. Preobrazhenskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antikon@ipmras.ru
Rússia, Novosibirsk, 630090

V. Gavrilenko

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: antikon@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017

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