Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
- Authors: Krishtopenko S.S.1,2, Ikonnikov A.V.1,3, Maremyanin K.V.1,3, Bovkun L.S.1, Spirin K.E.1, Kadykov A.M.1,2, Marcinkiewicz M.2, Ruffenach S.2, Consejo C.2, Teppe F.2, Knap W.2, Semyagin B.R.4, Putyato M.A.4, Emelyanov E.A.4, Preobrazhenskii V.V.4, Gavrilenko V.I.1,3
-
Affiliations:
- Institute for Physics of Microstructures
- Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
- Lobachevsky State University of Nizhny Novgorod
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 51, No 1 (2017)
- Pages: 38-42
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199298
- DOI: https://doi.org/10.1134/S1063782617010109
- ID: 199298
Cite item
Abstract
The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
About the authors
S. S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095
A. V. Ikonnikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. V. Maremyanin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. S. Bovkun
Institute for Physics of Microstructures
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
K. E. Spirin
Institute for Physics of Microstructures
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. M. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Montpellier, 34095
M. Marcinkiewicz
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
France, Montpellier, 34095
S. Ruffenach
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
France, Montpellier, 34095
C. Consejo
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
France, Montpellier, 34095
F. Teppe
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
France, Montpellier, 34095
W. Knap
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
France, Montpellier, 34095
B. R. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090
E. A. Emelyanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090
V. V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Russian Federation, Novosibirsk, 630090
V. I. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950