Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells
- Авторлар: Krishtopenko S.1,2, Ikonnikov A.1,3, Maremyanin K.1,3, Bovkun L.1, Spirin K.1, Kadykov A.1,2, Marcinkiewicz M.2, Ruffenach S.2, Consejo C.2, Teppe F.2, Knap W.2, Semyagin B.4, Putyato M.4, Emelyanov E.4, Preobrazhenskii V.4, Gavrilenko V.1,3
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Мекемелер:
- Institute for Physics of Microstructures
- Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
- Lobachevsky State University of Nizhny Novgorod
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 51, № 1 (2017)
- Беттер: 38-42
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199298
- DOI: https://doi.org/10.1134/S1063782617010109
- ID: 199298
Дәйексөз келтіру
Аннотация
The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
Авторлар туралы
S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
A. Ikonnikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. Maremyanin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. Bovkun
Institute for Physics of Microstructures
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950
K. Spirin
Institute for Physics of Microstructures
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
M. Marcinkiewicz
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
S. Ruffenach
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
C. Consejo
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
F. Teppe
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
W. Knap
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090
E. Emelyanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950