Enviar artigo por via de e-mail Improving the functional characteristics of gallium nitride during vapor phase epitaxy
- Autores: Vigdorovich E.1
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Afiliações:
- Moscow State University of Instrument Engineering and Computer Science
- Edição: Volume 50, Nº 13 (2016)
- Páginas: 1697-1701
- Seção: Materials for Electronic Engineering
- URL: https://journals.rcsi.science/1063-7826/article/view/199191
- DOI: https://doi.org/10.1134/S1063782616130108
- ID: 199191
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Resumo
The mechanisms of gallium nitride crystallization during vapor phase epitaxy are theoretically analyzed. The limited growth in the boundary layer is thoroughly investigated. The conditions for control of the process and intensification of the mass transfer are determined. The effect of the substrate rotation speed on the crystallization mechanism is experimentally studied.
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Sobre autores
E. Vigdorovich
Moscow State University of Instrument Engineering and Computer Science
Autor responsável pela correspondência
Email: evgvig@mail.ru
Rússia, Moscow, 107996
