Enviar artigo por via de e-mail Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells
- Autores: Fadeev M.1,2, Varavin V.3, Mikhailov N.3,4, Dvoretsky S.3, Gavrilenko V.1,2, Teppe F.5, Kozlov D.1,2, Rumyantsev V.1,2, Morozov S.1,2, Kadykov A.1,5
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Afiliações:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Laboratoire Charles Coulomb (L2C)
- Edição: Volume 50, Nº 12 (2016)
- Páginas: 1662-1668
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/199046
- DOI: https://doi.org/10.1134/S1063782616120113
- ID: 199046
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Resumo
A long-wavelength band caused by transitions between states related to the valence band is detected in the photoconductivity spectra of HgyTe1 – y/CdxHg1 – xTe (CMT) structures with quantum wells. The energy states of mercury vacancies in quantum wells of CMT structures is calculated taking into account a chemical shift. It is shown that the long-wavelength band observed in the photoconductivity spectra of these structures is associated with the ionization of divalent acceptor centers which are such vacancies.
Sobre autores
M. Fadeev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: dvkoz@ipmras.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: dvkoz@ipmras.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: dvkoz@ipmras.ru
Rússia, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
F. Teppe
Laboratoire Charles Coulomb (L2C)
Email: dvkoz@ipmras.ru
França, Montpellier
D. Kozlov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C)
Email: dvkoz@ipmras.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950; Montpellier
