PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity
- Autores: Ishchenko D.1, Klimov A.1, Shumsky V.1, Epov V.1
-
Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 50, Nº 12 (2016)
- Páginas: 1635-1640
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198930
- DOI: https://doi.org/10.1134/S1063782616120083
- ID: 198930
Citar
Resumo
A model of the Pb1–xSnxTe:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level position and carrier concentration are calculated depending on the indium doping level and are compared with experimental data. The transient current–voltage characteristics are calculated in the mode of injection from the contact and current limitation by space charge at various voltage-variation rates. The data obtained are compared with the experiments. It is demonstrated that the shape of the characteristics is controlled by the parameters of electron capture at localized states. Photocurrent relaxation in a magnetic field is studied, and the mechanism of such relaxation is discussed under the assumption of the magnetic freezing of carriers.
Sobre autores
D. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: miracle4348@gmail.com
Rússia, av. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: miracle4348@gmail.com
Rússia, av. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. Shumsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: miracle4348@gmail.com
Rússia, av. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: miracle4348@gmail.com
Rússia, av. Akad. Lavrent’eva 13, Novosibirsk, 630090