Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
- Autores: Koryazhkina M.1, Tikhov S.1, Gorshkov O.1, Kasatkin A.1, Antonov I.1
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Edição: Volume 50, Nº 12 (2016)
- Páginas: 1614-1618
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198841
- DOI: https://doi.org/10.1134/S1063782616120095
- ID: 198841
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Resumo
It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of the Fermi-level pinning energy at this interface towards the valence-band ceiling in silicon and in increasing the surface-state density at energies close to the Fermi level. In this case, a band with a peak at 0.85 eV arises on the photosensivity curves of the capacitor photovoltage, which is explained by the photoemission of electrons from the formed Au-nanoparticle electron states near the valence-band ceiling in silicon.
Sobre autores
M. Koryazhkina
Lobachevsky State University of Nizhny Novgorod (NNSU)
Autor responsável pela correspondência
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
S. Tikhov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
O. Gorshkov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
A. Kasatkin
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950
I. Antonov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Rússia, Nizhny Novgorod, 603950