Investigation of the thermal stability of metastable GeSn epitaxial layers
- Autores: Martovitsky V.1, Sadofyev Y.1,2, Klekovkin A.1, Saraikin V.3, Vasil’evskii I.2
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Afiliações:
- Lebedev Physical Institute
- National Research Nuclear University “Moscow Engineering Physics Institute,”
- Lukin State Research Institute of Physical Problems
- Edição: Volume 50, Nº 11 (2016)
- Páginas: 1548-1553
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198694
- DOI: https://doi.org/10.1134/S106378261611018X
- ID: 198694
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Resumo
A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on a (001) Si/Ge virtual substrate. The molar fraction of Sn in the GeSn layers is 0.005, 0.034, 0.047, 0.072, and 0.10. After growth the structure is subjected to thermal annealing for 2 min at a temperature of 400°C. It is demonstrated that during the course of annealing the GeSn alloy, along with plastic relaxation, undergoes phase separation; this phase separation begins before the end of plastic relaxation. The structural degradation of the GeSn layers increases with increasing concentration of Sn accumulated on the structure surface in the form of an amorphous layer.
Sobre autores
V. Martovitsky
Lebedev Physical Institute
Email: aklekovkinbox@gmail.com
Rússia, Moscow, 119991
Yu. Sadofyev
Lebedev Physical Institute; National Research Nuclear University “Moscow Engineering Physics Institute,”
Email: aklekovkinbox@gmail.com
Rússia, Moscow, 119991; Moscow, 115409
A. Klekovkin
Lebedev Physical Institute
Autor responsável pela correspondência
Email: aklekovkinbox@gmail.com
Rússia, Moscow, 119991
V. Saraikin
Lukin State Research Institute of Physical Problems
Email: aklekovkinbox@gmail.com
Rússia, Zelenograd, 124460
I. Vasil’evskii
National Research Nuclear University “Moscow Engineering Physics Institute,”
Email: aklekovkinbox@gmail.com
Rússia, Moscow, 115409