Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
- Autores: Asryan L.1, Zubov F.2,3, Kryzhanovskaya N.2,3, Maximov M.2,3, Zhukov A.2,3
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Afiliações:
- Virginia Polytechnic Institute and State University
- St. Petersburg National Research Academic University
- Peter-the-Great Polytechnic University
- Edição: Volume 50, Nº 10 (2016)
- Páginas: 1362-1368
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198089
- DOI: https://doi.org/10.1134/S1063782616100055
- ID: 198089
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Resumo
The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.
Sobre autores
L. Asryan
Virginia Polytechnic Institute and State University
Autor responsável pela correspondência
Email: asryan@vt.edu
Estados Unidos da América, Blacksburg, Virginia, 24061
F. Zubov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
N. Kryzhanovskaya
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
M. Maximov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
A. Zhukov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021; St. Petersburg, 195251