Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
- Autores: Aleksandrov P.1, Baranova E.1, Budaragin V.1
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Afiliações:
- National Research Center “Kurchatov Institute,”
- Edição: Volume 50, Nº 8 (2016)
- Páginas: 1107-1111
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197733
- DOI: https://doi.org/10.1134/S1063782616080054
- ID: 197733
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Resumo
We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.
Sobre autores
P. Aleksandrov
National Research Center “Kurchatov Institute,”
Autor responsável pela correspondência
Email: Alexandrov_PA@nrcki.ru
Rússia, Moscow, 123098
E. Baranova
National Research Center “Kurchatov Institute,”
Email: Alexandrov_PA@nrcki.ru
Rússia, Moscow, 123098
V. Budaragin
National Research Center “Kurchatov Institute,”
Email: Alexandrov_PA@nrcki.ru
Rússia, Moscow, 123098