Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact
- Autores: Babichev A.1,2,3, Zhang H.4, Guan N.4, Egorov A.2, Julien F.4, Messanvi A.4,5,6, Durand C.5,6, Eymery J.5,6, Tchernycheva M.4
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Afiliações:
- Ioffe Institute
- ITMO University
- St. Petersburg Academic University
- Institut d’Electronique Fondamentale, UMR 8622 CNRS
- University Grenoble Alpes
- CEA, INAC-SP2M
- Edição: Volume 50, Nº 8 (2016)
- Páginas: 1097-1101
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197708
- DOI: https://doi.org/10.1134/S106378261608008X
- ID: 197708
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Resumo
We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In0.18Ga0.82N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.
Sobre autores
A. Babichev
Ioffe Institute; ITMO University; St. Petersburg Academic University
Autor responsável pela correspondência
Email: A.Babichev@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101; 194021
H. Zhang
Institut d’Electronique Fondamentale, UMR 8622 CNRS
Email: A.Babichev@mail.ioffe.ru
França, Orsay Cedex, 91405
N. Guan
Institut d’Electronique Fondamentale, UMR 8622 CNRS
Email: A.Babichev@mail.ioffe.ru
França, Orsay Cedex, 91405
A. Egorov
ITMO University
Email: A.Babichev@mail.ioffe.ru
Rússia, St. Petersburg, 197101
F. Julien
Institut d’Electronique Fondamentale, UMR 8622 CNRS
Email: A.Babichev@mail.ioffe.ru
França, Orsay Cedex, 91405
A. Messanvi
Institut d’Electronique Fondamentale, UMR 8622 CNRS; University Grenoble Alpes; CEA, INAC-SP2M
Email: A.Babichev@mail.ioffe.ru
França, Orsay Cedex, 91405; Grenoble, 38000; Grenoble, 38000
C. Durand
University Grenoble Alpes; CEA, INAC-SP2M
Email: A.Babichev@mail.ioffe.ru
França, Grenoble, 38000; Grenoble, 38000
J. Eymery
University Grenoble Alpes; CEA, INAC-SP2M
Email: A.Babichev@mail.ioffe.ru
França, Grenoble, 38000; Grenoble, 38000
M. Tchernycheva
Institut d’Electronique Fondamentale, UMR 8622 CNRS
Email: A.Babichev@mail.ioffe.ru
França, Orsay Cedex, 91405