Enviar artigo por via de e-mail Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
- Autores: Abramov A.1,2, Andronikov D.1,2, Emtsev K.1,2, Kukin A.1,2, Semenov A.1,2, Terukova E.1,2, Titov A.1,2, Yakovlev S.1,2
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Afiliações:
- Ioffe Physical–Technical Institute
- RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
- Edição: Volume 50, Nº 8 (2016)
- Páginas: 1074-1078
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197670
- DOI: https://doi.org/10.1134/S1063782616080030
- ID: 197670
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Resumo
The photoinduced degradation of photovoltaic converters based on an a-Si:H/µc-Si:H tandem structure under a standard illuminance of 1000 W/m2 is studied. The spectral and current–voltage characteristics of specially fabricated samples with various degrees of crystallinity of the intrinsic layer in the lower (microcrystalline) cascade are measured in the course of the tests.
Sobre autores
A. Abramov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
D. Andronikov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
K. Emtsev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
A. Kukin
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
A. Semenov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
E. Terukova
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
A. Titov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
S. Yakovlev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194068
