| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
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| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
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| Том 51, № 1 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
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| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
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| Том 52, № 13 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
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| Том 53, № 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |
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| Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
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