Автор туралы ақпарат
Bannaya, V. F.
Шығарылым | Бөлім | Атауы | Файл |
Том 51, № 3 (2017) | Electronic Properties of Semiconductors | Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength | |
Том 52, № 3 (2018) | Electronic Properties of Semiconductors | Electrical Breakdown in Pure n- and p-Si | |
Том 53, № 1 (2019) | Electronic Properties of Semiconductors | Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |