Author Details
Bannaya, V. F.
Issue | Section | Title | File |
Vol 51, No 3 (2017) | Electronic Properties of Semiconductors | Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength | |
Vol 52, No 3 (2018) | Electronic Properties of Semiconductors | Electrical Breakdown in Pure n- and p-Si | |
Vol 53, No 1 (2019) | Electronic Properties of Semiconductors | Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |