Автор туралы ақпарат

Dorokhin, M. V.

Шығарылым Бөлім Атауы Файл
Том 50, № 1 (2016) XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On the crystal structure and thermoelectric properties of thin Si1–xMnx films
Том 51, № 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Thermoelectric effects in nanoscale layers of manganese silicide
Том 51, № 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Features of the selective manganese doping of GaAs structures
Том 52, № 8 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions
Том 52, № 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering
Том 53, № 1 (2019) Physics of Semiconductor Devices Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell
Том 53, № 3 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition
Том 53, № 9 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique
Том 53, № 9 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers

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