Автор туралы ақпарат
Goldman, E.
Шығарылым | Бөлім | Атауы | Файл |
Том 51, № 9 (2017) | Surfaces, Interfaces, and Thin Films | Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures | |
Том 53, № 1 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements | |
Том 53, № 1 (2019) | Physics of Semiconductor Devices | On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect | |
Том 53, № 4 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures |