Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
- Авторлар: Eliseyev I.1, Davydov V.1, Smirnov A.1, Nestoklon M.1, Dementev P.1, Lebedev S.1, Lebedev A.1, Zubov A.2, Mathew S.3,4, Pezoldt J.3, Bokai K.5, Usachov D.5
-
Мекемелер:
- Ioffe Institute
- ITMO University
- Technische Universität Ilmenau
- Friedrich-Schiller-Universität Jena
- Saint-Petersburg State University
- Шығарылым: Том 53, № 14 (2019)
- Беттер: 1904-1909
- Бөлім: Nanostructures Characterization
- URL: https://journals.rcsi.science/1063-7826/article/view/207513
- DOI: https://doi.org/10.1134/S1063782619140057
- ID: 207513
Дәйексөз келтіру
Аннотация
Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were grown by thermal destruction of the Si-face of the 4H-SiC substrate. Analysis of the results led us to the conclusion that for the correct estimation of the electron concentration and strain values in graphene using Raman spectroscopy data it is necessary to take into account the value of the Fermi velocity in the graphene layer. This conclusion is valid for graphene on any other substrate as well, since the Fermi velocity in graphene depends on the dielectric constant of the substrate.
Авторлар туралы
I. Eliseyev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: zoid95@yandex.ru
Ресей, St. Petersburg, 194021
V. Davydov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: valery.davydov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: alex.smirnov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Nestoklon
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: nestoklon.coherent@mail.ioffe.ru
Ресей, St. Petersburg, 194021
P. Dementev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: demenp@yandex.ru
Ресей, St. Petersburg, 194021
S. Lebedev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: lebedev.sergey@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Lebedev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Zubov
ITMO University
Хат алмасуға жауапты Автор.
Email: alexander.zubov@nitride-crystals.com
Ресей, St. Petersburg, 197101
S. Mathew
Technische Universität Ilmenau; Friedrich-Schiller-Universität Jena
Хат алмасуға жауапты Автор.
Email: smerumpan@gmail.com
Германия, Ilmenau, 98693; Jena, 07745
J. Pezoldt
Technische Universität Ilmenau
Хат алмасуға жауапты Автор.
Email: joerg.pezoldt@tu-ilmenau.de
Германия, Ilmenau, 98693
K. Bokai
Saint-Petersburg State University
Хат алмасуға жауапты Автор.
Email: bokai.kirill@gmail.com
Ресей, St. Petersburg, 199034
D. Usachov
Saint-Petersburg State University
Хат алмасуға жауапты Автор.
Email: usachov.d@gmail.com
Ресей, St. Petersburg, 199034