Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
- Авторлар: Mokhov D.1, Berezovskaya T.1,2, Nikitina E.1, Shubina K.1, Mizerov A.1, Bouravleuv A.1,2,3
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Мекемелер:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1717-1723
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207432
- DOI: https://doi.org/10.1134/S1063782619160176
- ID: 207432
Дәйексөз келтіру
Аннотация
The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are reported. It is shown that the etching rates of layers with different polarities are markedly different. At the same time, the use of gold-based masks instead of titanium-based ones for the etching of GaN layers also provides a means for increasing the rate of layer etching.
Негізгі сөздер
Авторлар туралы
D. Mokhov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021
T. Berezovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
E. Nikitina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021
K. Shubina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021
A. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: dm_mokhov@rambler.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 197376