Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
- Авторы: Mokhov D.1, Berezovskaya T.1,2, Nikitina E.1, Shubina K.1, Mizerov A.1, Bouravleuv A.1,2,3
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Учреждения:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Выпуск: Том 53, № 12 (2019)
- Страницы: 1717-1723
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207432
- DOI: https://doi.org/10.1134/S1063782619160176
- ID: 207432
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Аннотация
The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are reported. It is shown that the etching rates of layers with different polarities are markedly different. At the same time, the use of gold-based masks instead of titanium-based ones for the etching of GaN layers also provides a means for increasing the rate of layer etching.
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Об авторах
D. Mokhov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021
T. Berezovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
E. Nikitina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021
K. Shubina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021
A. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: dm_mokhov@rambler.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 197376