Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
- Авторлар: Gagis G.1, Levin R.1, Marichev A.1, Pushnyi B.1, Scheglov M.1, Ber B.1, Kazantsev D.1, Kudriavtsev Y.2, Vlasov A.1, Popova T.1, Chistyakov D.3, Kuchinskii V.1,4, Vasil’ev V.1
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Мекемелер:
- Ioffe Institute
- Cinvestav-IPN
- ITMO University
- St. Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 53, № 11 (2019)
- Беттер: 1472-1478
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207283
- DOI: https://doi.org/10.1134/S106378261911006X
- ID: 207283
Дәйексөз келтіру
Аннотация
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid solutions with average compositions of x = 0.77–0.87 and y = 0.07–0.42, the variation in the content y of V-group atoms over the epitaxial-layer thickness by a value of Δy up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in y occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases, y varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δy is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δy is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.
Негізгі сөздер
Авторлар туралы
G. Gagis
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
R. Levin
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
A. Marichev
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
M. Scheglov
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
B. Ber
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
D. Kazantsev
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
Yu. Kudriavtsev
Cinvestav-IPN
Email: galina.gagis@gmail.com
Мексика, Cinvestav-IPN, 2508
A. Vlasov
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
T. Popova
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021
D. Chistyakov
ITMO University
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 197101
V. Kuchinskii
Ioffe Institute; St. Petersburg Electrotechnical University “LETI”
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 197022
V. Vasil’ev
Ioffe Institute
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021