Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy


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Аннотация

GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid solutions with average compositions of x = 0.77–0.87 and y = 0.07–0.42, the variation in the content y of V-group atoms over the epitaxial-layer thickness by a value of Δy up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in y occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases, y varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δy is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δy is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.

Авторлар туралы

G. Gagis

Ioffe Institute

Хат алмасуға жауапты Автор.
Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

R. Levin

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

A. Marichev

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

B. Pushnyi

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

M. Scheglov

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

B. Ber

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

D. Kazantsev

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

Yu. Kudriavtsev

Cinvestav-IPN

Email: galina.gagis@gmail.com
Мексика, Cinvestav-IPN, 2508

A. Vlasov

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

T. Popova

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021

D. Chistyakov

ITMO University

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 197101

V. Kuchinskii

Ioffe Institute; St. Petersburg Electrotechnical University “LETI”

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 197022

V. Vasil’ev

Ioffe Institute

Email: galina.gagis@gmail.com
Ресей, St. Petersburg, 194021


© Pleiades Publishing, Ltd., 2019

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