Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
- Authors: Gagis G.S.1, Levin R.V.1, Marichev A.E.1, Pushnyi B.V.1, Scheglov M.P.1, Ber B.Y.1, Kazantsev D.Y.1, Kudriavtsev Y.A.2, Vlasov A.S.1, Popova T.B.1, Chistyakov D.V.3, Kuchinskii V.I.1,4, Vasil’ev V.I.1
-
Affiliations:
- Ioffe Institute
- Cinvestav-IPN
- ITMO University
- St. Petersburg Electrotechnical University “LETI”
- Issue: Vol 53, No 11 (2019)
- Pages: 1472-1478
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207283
- DOI: https://doi.org/10.1134/S106378261911006X
- ID: 207283
Cite item
Abstract
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid solutions with average compositions of x = 0.77–0.87 and y = 0.07–0.42, the variation in the content y of V-group atoms over the epitaxial-layer thickness by a value of Δy up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in y occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases, y varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δy is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δy is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.
About the authors
G. S. Gagis
Ioffe Institute
Author for correspondence.
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
A. E. Marichev
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
B. V. Pushnyi
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
M. P. Scheglov
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
B. Ya. Ber
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
D. Yu. Kazantsev
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
Yu. A. Kudriavtsev
Cinvestav-IPN
Email: galina.gagis@gmail.com
Mexico, Cinvestav-IPN, 2508
A. S. Vlasov
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
T. B. Popova
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
D. V. Chistyakov
ITMO University
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 197101
V. I. Kuchinskii
Ioffe Institute; St. Petersburg Electrotechnical University “LETI”
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197022
V. I. Vasil’ev
Ioffe Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021