Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process

Аннотация

Nanoindentation to a depth of 1 nm in (001) GaAs surfaces terminated by As simulated in the temperature range from 1 to 15 K using the molecular-dynamics method is simulated. It is shown that this is accompanied by surface reconstruction with the formation of stable dimers As (1 × 2), which do not disappear after indenter withdrawal from the surface.