Email this article Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
- Authors: Prasolov N.D.1, Gutkin A.A.2, Brunkov P.N.1,2
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Affiliations:
- ITMO University
- Ioffe Institute
- Issue: Vol 53, No 10 (2019)
- Pages: 1386-1388
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207236
- DOI: https://doi.org/10.1134/S1063782619100166
- ID: 207236
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Abstract
Nanoindentation to a depth of 1 nm in (001) GaAs surfaces terminated by As simulated in the temperature range from 1 to 15 K using the molecular-dynamics method is simulated. It is shown that this is accompanied by surface reconstruction with the formation of stable dimers As (1 × 2), which do not disappear after indenter withdrawal from the surface.
About the authors
N. D. Prasolov
ITMO University
Email: brunkov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. A. Gutkin
Ioffe Institute
Email: brunkov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. N. Brunkov
ITMO University; Ioffe Institute
Author for correspondence.
Email: brunkov@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
