Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
- Авторлар: Uvarov A.1, Zelentsov K.1, Gudovskikh A.1,2
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Мекемелер:
- St. Petersburg National Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 53, № 8 (2019)
- Беттер: 1075-1081
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206638
- DOI: https://doi.org/10.1134/S1063782619080207
- ID: 206638
Дәйексөз келтіру
Аннотация
The effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n-type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.
Негізгі сөздер
Авторлар туралы
A. Uvarov
St. Petersburg National Academic University, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: uvarov@spbau.ru
Ресей, St. Petersburg, 194021
K. Zelentsov
St. Petersburg National Academic University, Russian Academy of Sciences
Email: uvarov@spbau.ru
Ресей, St. Petersburg, 194021
A. Gudovskikh
St. Petersburg National Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: uvarov@spbau.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376