Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
- Autores: Uvarov A.1, Zelentsov K.1, Gudovskikh A.1,2
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Afiliações:
- St. Petersburg National Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Edição: Volume 53, Nº 8 (2019)
- Páginas: 1075-1081
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206638
- DOI: https://doi.org/10.1134/S1063782619080207
- ID: 206638
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Resumo
The effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n-type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.
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Sobre autores
A. Uvarov
St. Petersburg National Academic University, Russian Academy of Sciences
Autor responsável pela correspondência
Email: uvarov@spbau.ru
Rússia, St. Petersburg, 194021
K. Zelentsov
St. Petersburg National Academic University, Russian Academy of Sciences
Email: uvarov@spbau.ru
Rússia, St. Petersburg, 194021
A. Gudovskikh
St. Petersburg National Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: uvarov@spbau.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197376