Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam
- Авторлар: Mikoushkin V.1, Bryzgalov V.1, Makarevskaya E.1, Solonitsyna A.1, Marchenko D.2
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Мекемелер:
- Ioffe Institute
- Helmholtz-Zentrum BESSY II, German-Russian Laboratory
- Шығарылым: Том 52, № 16 (2018)
- Беттер: 2057-2060
- Бөлім: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
- URL: https://journals.rcsi.science/1063-7826/article/view/205314
- DOI: https://doi.org/10.1134/S1063782618160194
- ID: 205314
Дәйексөз келтіру
Аннотация
The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth. The presence of only two phases was observed: of the gallium oxide Ga2O3 and elementary arsenic Aso generated due to complete decay of arsenic oxides under the ion irradiation. Depth composition profiles were determined nondestructively. Despite inhomogeneous depth distribution, these profiles demonstrated domination (90 at %) of the dielectric Ga2O3 phase virtually throughout all the oxide thickness (~2 nm).
Авторлар туралы
V. Mikoushkin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: M.Miikoushkin@mail.ioffe.ru
Ресей, Saint-Petersburg, 194021
V. Bryzgalov
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Ресей, Saint-Petersburg, 194021
E. Makarevskaya
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Ресей, Saint-Petersburg, 194021
A. Solonitsyna
Ioffe Institute
Email: M.Miikoushkin@mail.ioffe.ru
Ресей, Saint-Petersburg, 194021
D.E. Marchenko
Helmholtz-Zentrum BESSY II, German-Russian Laboratory
Email: M.Miikoushkin@mail.ioffe.ru
Германия, Berlin, D-12489