Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
- Авторлар: Demir I.1, Altuntas I.1, Kasapoğlu A.2, Mobtakeri S.2, Gür E.2,3, Elagoz S.1
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Мекемелер:
- Department of Nanotechnology Engineering, Nanophotonics Research and Application Center Cumhuriyet University
- East Anatolia High Technology Application and Research Center, Atatürk University
- Department of Physics, Faculty of Science, Ataturk University
- Шығарылым: Том 52, № 16 (2018)
- Беттер: 2030-2038
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205288
- DOI: https://doi.org/10.1134/S1063782618160066
- ID: 205288
Дәйексөз келтіру
Аннотация
We report the effect of total carrier gas flow of GaN during both GaN nucleation layer and high temperature GaN growth steps on structural, optical, electrical and morphological properties. The formation of dislocations in GaN layer and their effects were investigated in detail as a function of carrier gas flow. It has been found that the more carrier gas requires longer recovery time for transition from 3D (3 dimensional) to 2D growth and results in smaller edge-type dislocation density. The images obtained from the AFM measurements have shown terraces widths varying between 60–150 nm depending on the hydrogen flow rate.
Негізгі сөздер
Авторлар туралы
I. Demir
Department of Nanotechnology Engineering, Nanophotonics Research and Application Center Cumhuriyet University
Email: elagoz@cumhuriyet.edu.tr
Түркия, Sivas, 58140
I. Altuntas
Department of Nanotechnology Engineering, Nanophotonics Research and Application Center Cumhuriyet University
Email: elagoz@cumhuriyet.edu.tr
Түркия, Sivas, 58140
A. Kasapoğlu
East Anatolia High Technology Application and Research Center, Atatürk University
Email: elagoz@cumhuriyet.edu.tr
Түркия, Erzurum, 25240
S. Mobtakeri
East Anatolia High Technology Application and Research Center, Atatürk University
Email: elagoz@cumhuriyet.edu.tr
Түркия, Erzurum, 25240
E. Gür
East Anatolia High Technology Application and Research Center, Atatürk University; Department of Physics, Faculty of Science, Ataturk University
Email: elagoz@cumhuriyet.edu.tr
Түркия, Erzurum, 25240; Erzurum, 25250
S. Elagoz
Department of Nanotechnology Engineering, Nanophotonics Research and Application Center Cumhuriyet University
Хат алмасуға жауапты Автор.
Email: elagoz@cumhuriyet.edu.tr
Түркия, Sivas, 58140